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Well-ordered large-area arrays of epitaxial ferroelectric (Bi,La)_4Ti_3O_(12) nanostructures fabricated by gold nanotube-membrane lithography

机译:金纳米管-膜光刻技术制备的高序外延铁电(Bi,La)_4Ti_3O_(12)纳米结构的大面积阵列

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Two-dimensionally well-ordered, large-area arrays of epitaxial, ferroelectric, La-substituted Bi_4Ti_3O_(12) (BLT) nanostructures are prepared using gold nanotube membranes as a liftoff mask. Epitaxial nanostructures with a height of about 65 nm and a lateral size of about 150 nm, with either (001) ("c-axis") orientation, or mixed (118)/(100) ("non-c-axis") orientation, are obtained on (001)-and (011)-oriented SrTiO_3 substrates, respectively. The ferroelectric properties are probed by piezoresponse scanning force microscopy. Non-c-axis-oriented BLT nanostructures show an effective piezoresponse coefficient (2d_(zz)) of about 38.0 pm/V, whereas c-axis-oriented structures show one of only about 4.9 pm/V.
机译:使用金纳米管膜作为剥离掩模,制备了二维有序的大面积外延,铁电,La取代的Bi_4Ti_3O_(12)(BLT)纳米结构阵列。具有(001)(“ c轴”)取向或混合(118)/(100)(“非c轴”)取向的,高度约65 nm,横向尺寸约150 nm的外延纳米结构分别在(001)和(011)取向的SrTiO_3衬底上获得取向。铁电性能通过压电响应扫描力显微镜进行探测。非c轴定向的BLT纳米结构显示约38.0 pm / V的有效压电响应系数(2d_(zz)),而c轴定向的结构仅显示约4.9 pm / V的其中之一。

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