Radiative and nonradiative recombination processes in InN films grown by metal organic chemical vapor deposition

摘要

The 800 meV photoluminescence band in indium nitride is excited under pulsed excitation conditions and is investigated as a function of temperature and time. Our results are consistent with a composite photoluminescence feature composed of two overlapping bands separated by an ～10 meV splitting, with populations described by a thermal equilibrium model. Efficient nonradiative recombination channels rule both the temperature dependence of the time-integrated photoluminescence spectra and the recombination dynamics. At 10 K, the radiative recombination time is of the order of 300 ns, while the nonradiative recombination time, which is ruled by activation energy of 8 meV, is about 100 ps.