Electroreflectance studies of InAs quantum dots with In_xGa_(1-x)As capping layer grown by metalorganic chemical vapor deposition

摘要

Electroreflectance spectroscopy was used to study the effect of In_xGa_(1-x)As capping layer on InAs quantum dots grown by metalorganic chemical vapor deposition. The optical transitions of the quantum dots and the In_xGa_(1-x)As capping layer were well resolved. The energy shifts in the In_xGa_(1-x)As capping layer show a different trend as compared to a series of referent In_xGa_(1-x)As quantum wells. These results support the concept of strain-driven alloy decomposition during the In_xGa_(1-x)As layer overgrowth.