Photocarrier injection effect and p-n junction characteristics of La_(0.7)Sr_(0.3)MnO_3/ZnO and Si heterostructures

摘要

The authors report the fabrication of p-n junctions, consisting of p-type La_(0.7)Sr_(0.3)MnO_3 (LSMO) and either n-type ZnO grown on sapphire or n-type Si substrates. The LSMO/ZnO junction exhibits excellent rectifying behavior over the temperature range of 77-300 K with breakdown voltage less than -10 V. LSMO/Si displayed p-n junction characteristics over a temperature region of 77-360 K. Inserting a SrTiO_3 layer between LSMO and Si remarkably improved the junction characteristics. All junctions show photocarrier injection effect, illustrating the control of transport properties of LSMO in which electron injection decreases hole concentration following the photoexcitation of both ZnO and Si.