METHOD OF FORMING P-N JUNCTION ON ZNO THIN FILM AND P-N JUNCTION THIN FILM

摘要

The present invention discloses a method of forming a p-n junction on a ZnO thin film and a p-n junction thin film. The object of the present invention is to provide a method of forming a p-n junction on a ZnO thin film and a p-n junction thin film which deposits Zn₃P₂ on a ZnO thin film and forms a p-type material constituting a device by using thermal diffusion for the Zn₃P₂ in order to fabricate an effective p-type material. The method of forming a p-n junction on a ZnO thin film, in a light emitting device having a sapphire substrate as a base substrate, comprises the steps of: cladding the sapphire substrate with a n-type ZnO thin film; depositing a Zn₃P₂ thin film on the n-type ZnO thin film; forming a p-type ZnO thin film by irradiating a laser on the upper surface of the Zn₃P₂ thin film, decomposing the Zn₃P₂ thin film and diffusing the same on the n-type ZnO thin film; and forming an electrode on the n-type ZnO thin film and the p-type ZnO thin film respectively. According to the present invention, an effective light emitting device can be fabricated by depositing Zn₃P₂ on the upper surface of a ZnO thin film, irradiating the laser on the Zn₃P₂ film and thereby substituting the Zn₃P₂ film for a p-type material. Moreover, by a multi-layer junction of the p-type material, a light emitting device of an extended concept such as npn-type and pnpn-type can be fabricated.