Field emission of silicon nanowires

摘要

Field emission of single crystal silicon nanowires of 100 nm in diameter grown at 480℃ from silane using Au as catalyst has been investigated. An emission current density of 1 mA/cm~2 over a 0.2 cm~2 area was obtained at an electric field of 3.4 V/蘭 with a turn-on field of 2 V/μm at 0.01 mA/cm~2. The annealing of the as-grown samples at 550℃ in vacuum has drastically improved the field emission performance. The low growth and annealing temperatures make the process applicable to glass substrates.