Fowler-Nordheim hole tunneling in metal-Er_2O_3-silicon structures

摘要

Fowler-Nordheim (FN) tunneling of holes in metal-Er_2O_3-Si structures is confirmed. The effective mass of holes in Er_2O_3 films is estimated ranging from 0.068m to 0.092m, where m is the free electron mass. The film shows a high breakdown electric field of about 70 MV/cm for an Er_2O_3 film thickness of 8.5 nm, implying that the film which is epitaxially grown on Si substrate has smooth interface and surface.