Hole injection and dielectric breakdown in 6H-SiC and 4H-SiCn metal-oxide-semiconductor structures during substrate electron injectionn via Fowler-Nordheim tunneling

摘要

Hole injection into silicon dioxide (SiO2) films (8-40 nm thick) is investigated for the first time during substrate electron injection via Fowler-Nordheim (FN) tunneling in n-type 4H-and 6H-SiC (silicon carbide) based metal-oxide-semiconductor (MOS) structures at a wide range of temperatures (T) between 298 and 598 K and oxide electric fields E-ox from 6 to 10 MV/cm. Holes are generated in heavily doped n-type polycrystalline silicon (n(+)-polySi) gate serving as the anode as well as in the bul