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Heat flow in AlGaInP/GaAs light-emitting diodes

机译:AlGaInP / GaAs发光二极管中的热流

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摘要

The differential equations of heat flow with boundary conditions suited to light-emitting diodes (LEDs) were analytically solved. An AlGaInP/GaAs LED is considered as an example. The agreement between the theoretical and experimental evolutions of the junction temperature demonstrates the accuracy of this analytical solution. Additionally, since the increase of the junction temperature depends on the thermal properties of the substrate, the measured junction temperature together with the analytical solution yield the thermal properties of the substrate.
机译:解析了适用于发光二极管(LED)的边界条件下的热流微分方程。以AlGaInP / GaAs LED为例。结温的理论和实验演变之间的一致性证明了该分析解决方案的准确性。另外,由于结温的升高取决于衬底的热性能,因此测得的结温与分析溶液一起可得出衬底的热性能。

著录项

  • 来源
    《Applied Physics Letters》 |2007年第18期|p.181104.1-181104.3|共3页
  • 作者单位

    Institute of Electro-Optical Engineering, Department of Electronic Engineering, Chang Gung University, Tao-Yuan, 333 Taiwan, Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用物理学;计量学;
  • 关键词

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