首页> 外文期刊>Photonics Technology Letters, IEEE >Research on Performance of Red Vertical AlGaInP/GaAs Light-Emitting Diodes Influenced by Current Crowding
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Research on Performance of Red Vertical AlGaInP/GaAs Light-Emitting Diodes Influenced by Current Crowding

机译:电流拥挤影响红色垂直AlGaInP / GaAs发光二极管性能的研究

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摘要

The authors show that the performance of red vertical AlGaInP/GaAs light-emitting diodes is compromised by the current crowding (CC) effect in the moderate-current (space charge region dominates in the device performance) and high-current (series resistance dominates in the equivalent circuit of a device) domains. Depending on the contact pattern, a remarkable part of the performance degradation comes as a result of the electrical power lost on the series resistance ($sim$17%). CC affects the ideality factor and causes the current spreading length to decrease from 425 $muhbox{m}$ at low currents to 75 $muhbox{m}$ at a current of 250 mA.
机译:这组作者表明,红色的垂直AlGaInP / GaAs发光二极管的性能受到中等电流(器件性能中占主导地位的空间电流)和高电流(串联电阻中占主导地位)的电流拥挤(CC)效应的影响。设备的等效电路)域。根据接触方式的不同,性能的显着下降是由于串联电阻上的电能损失所致( $ sim $ 17%)。 CC影响理想因子,并使电流扩展长度从低电流时的425 $ muhbox {m} $ 减小到75 $ muhbox {m} $ 电流为250 mA。<?Pub _bookmark Command =“ [Quick Mark]”? >

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