Oxide-confined AlGaInP/AlGaAs visible resonant cavity light-emitting diodes grown by solid source molecular beam epitaxy

摘要

Summary form only given. This paper reports the growth, fabrication, and characterization of the first solid source molecular beam epitaxially (SSMBE)-grown visible resonant cavity LED's. The epitaxial layers were grown by SSMBE on (100) Si-doped GaAs (2-inch) wafers.