Comparison of Low Temperature Photoluminescence of Bulk MBE (Molecular Beam Epitaxy) Grown AlGaAs and GaAs Using a Graphite Generated Dimer Versus a Standard Tetramer Arsenic Group-V Source

摘要

The carbon concentrations in GaAs and AlGaAs grown by Molecular Beam Epitaxy (MBE) have been studied when a graphite generated dimeric arsenic species and a standard tetramer arsenic species are used as the group-V source. Photoluminescence and Van der Pauw-Hall measurements have been made to examine the material quality in reference to which arsenic species is used for film growth. Results indicate that a graphite crucible arrangement for the thermal cracking of As sub 4 produces significant carbon contamination and is unacceptable for the MBE growth of GaAs and AlGaAs. 15 refs., 3 figs. (ERA citation 13:015366)