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Submicron-diameter semiconductor pillar microcavities with very high quality factors

机译:具有非常高品质因数的亚微米直径半导体支柱微腔

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摘要

Pillar microcavities are subject to two common fabrication artifacts: Bragg mirror corrugation and oxide deposit cladding. In this letter the authors investigate the impact of these features on the quality factor. A quasiperiodic variation of the quality factor as a function of the pillar diameter is experimentally observed and well described by theory. Moreover, observation of quality factors in excess of 1500, close to the theoretical limit, is reported for 600-nm-diameter GaAs micropillars bounded by AlGaAs/GaAs Bragg mirrors.
机译:支柱微腔会受到两种常见的制造伪影的影响:布拉格镜面波纹和氧化物沉积覆层。在这封信中,作者调查了这些功能对品质因数的影响。通过实验观察到品质因数的准周期变化,并通过理论进行了很好的描述。此外,据报道,以AlGaAs / GaAs Bragg镜为边界的直径为600 nm的GaAs微柱,观察到的质量因子超过1500,接近理论极限。

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