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SELF-ALIGNED CONTACT (SAC) ON GATE FOR IMPROVING METAL OXIDE SEMICONDUCTOR (MOS) VARACTOR QUALITY FACTOR

机译：门上自对准触点（SAC）以改善金属氧化物半导体（MOS）可变因素质量因子

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摘要

A short-channel metal oxide semiconductor varactor may include a source region of a first polarity having a source via contact. The varactor may further include a drain region of the first polarity having a drain via contact. The varactor may further include a channel region of the first polarity between the source region and the drain region. The channel region may include a gate. The varactor may further include at least one self-aligned contact (SAC) on the gate and between the source via contact and the drain via contact.

机译：短沟道金属氧化物半导体变容二极管可以包括具有源极通孔接触的第一极性的源极区。变容二极管可以进一步包括具有漏极通孔接触的第一极性的漏极区域。变容二极管可以进一步包括在源极区和漏极区之间的第一极性的沟道区。沟道区可以包括栅极。变容二极管可以进一步包括至少一个自对准触点（SAC），其在栅极上并且在源通触点和漏通触点之间。

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公开/公告号EP3642885A1

专利类型
公开/公告日2020-04-29

原文格式PDF
申请/专利权人 QUALCOMM INCORPORATED;
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申请/专利号EP20180735477
发明设计人 LU YE;YUE YUN;CHEN CHUAN-HSING;YANG BIN;GE LIXIN;LIAO KEN;
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申请日2018-06-11
分类号H01L29/93;H01L29/66;H01L23/66;H03H11/04;H03H11/34;H01L23/482;H01L21/8234;H01L21/768;
国家 EP
入库时间 2022-08-21 11:38:49

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