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Experimental Determination Of Valence Band Offset At Pbte/cdte(111) Heterojunction Interface By X-ray Photoelectron Spectroscopy

机译:X射线光电子能谱实验确定Pbte / cdte(111)异质结界面的价带偏移

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摘要

Lattice-matched PbTe/CdTe(111) heterojunction interfaces were studied using x-ray photoelectron spectroscopy. A type-Ⅰ band alignment with a valence band offset of △E_v= 0.135 ±0.05 eV and a conduction band offset of △E_c= 1.145 ±0.05 eV is concluded. Within experimental error the determined valence band offset is in agreement with theoretical prediction by inclusion of spin-orbit interaction.
机译:使用x射线光电子能谱研究了晶格匹配的PbTe / CdTe(111)异质结界面。得出价带偏移为△E_v = 0.135±0.05 eV,导带偏移为△E_c = 1.145±0.05 eV的Ⅰ型能带对准。在实验误差范围内,通过包含自旋轨道相互作用,确定的价带偏移与理论预测相符。

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