Improved Characteristics And Issues Of M-plane Ingan Films Grown On Low Defect Density M-plane Freestanding Gan Substrates By Metalorganic Vapor Phase Epitaxy

摘要

Improved quantum efficiency and short radiative lifetime were demonstrated for the near-band-edge emission of nearly stacking-fault-free, 200-250-nm-thick, m-plane pseudomorphic In_xGa_(1-x)N (0＜x≤0.14) films grown by metalorganic vapor phase epitaxy on the low threading dislocation density (＜5 × 10~6 cm~(-2)) freestanding (FS) GaN substrates. Values of full width at half maximum of x-ray w-rocking curves of the In_xGa_(1-x)N films remain unchanged as the substrate values being 80 and 60 arcsec for the (1010) diffraction with <0001> and <1120> azimuths, respectively, andrn80 arcsec for the (1012) diffraction. As the surface flatness was improved, the incorporation efficiency of In was lower than the cases for c-plane growth and m-plane growth on a defective GaN substrate, according to nonidentical surface kinetics and absence of inclined/tilted planes, respectively.