Lower current operation of phase change memory cell with a thin TiO_2 layer

摘要

The phase change memory cell with 8 nm TiO_2 layer inserted between phase change material Ge_2Sb_2Te_5 and bottom heating electrode tungsten was fabricated. It showed an advanced electrical threshold switching characteristics in the dc current-voltage measurement with the much lower value of threshold voltage of 1.5 V. The reset current of the device cell decreased 68% compared with that without TiO_2 layer. These results will contribute to the lower power consumption of the phase change memory. Besides that, the device cell showed good endurance characteristics, demonstrating the capability of random access memory application.