Time-resolved luminescence studies of proton-implanted GaN

摘要

Time-resolved photoluminescence measurements performed on proton implanted and annealed GaN layers have shown that carrier lifetime can be tuned over two orders of magnitude and, at implantation dose of 1 × 10~(15) cm~(-2), decreases down to a few picoseconds. With annealing at temperatures between 250 and 750 ℃, carrier lifetime, contrary to electrical characteristics, is only slightly restored, indicating that electrical compensation and carrier dynamics are governed by different defects. Ga vacancies, free and bound at threading dislocations, are suggested as the most probable defects, responsible for electrical compensation and carrier lifetime quenching.