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Strong Photoluminescence from InGaN/GaN Nanorods Arrays Studies by Time-Resolved Photoluminescence

机译:来自Ingan / GaN纳米棒的强光发光通过时间分辨的光致发光研究

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摘要

We report more than one order of magnitude stronger green photoluminescence from InGaN/GaN nanorods arrays compare to that from InGaN epilayer and its emission mechanism studied by time-resolved and temperature-resolved photoluminescence measurement.
机译:我们报告了从IngaN / GaN纳米棒阵列的多个数量级更强的绿色光致发光,与IngaN Epilayer的比较和其通过时间分辨和温度分辨的光致发光测量研究的发射机理。

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