机译:用时间分辨光致发光研究MOCVD良好生长的InGaN / GaN多量子的光学质量-锑表面活性剂效应
Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, Wroclaw 50-370, Poland;
Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, Wroclaw 50-370, Poland;
Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, Wroclaw 50-370, Poland;
Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, Wroclaw 50-370, Poland;
Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, Wroclaw 50-370, Poland;
Interdisciplinary Program of Photonics Engineering, Chonnam National University, Gwangju 500-757, Korea;
Department of Electrical and Computer Engineering, Hanyang University, Ansan 426-971, Korea;
Interdisciplinary Program of Photonics Engineering, Chonnam National University, Gwangju 500-757, Korea;
机译:锑表面活性剂对MOCVD生长的GaN / GaN多量子阱中绿色发射的影响
机译:在独立的本体GaN上生长的非极性m平面(1(1)over-bar00)InGaN / GaN多量子阱的光学研究
机译:通过时间分辨光致发光研究具有不同势垒的InGaN多量子阱中的载流子寿命
机译:通过金属有机化学气相沉积法生长的GaN InGaN和AlGaN的时间分辨光致发光研究
机译:V / III比率对MOCVD种植GaN质量的影响
机译:MOCVD生长的全应变c平面InGaN /(In)GaN多量子阱中极化场强度的降低
机译:mOCVD生长InGaN弹性体和InGaN / GaN量子阱中异常温度相关发射偏移的载流子动力学
机译:mOCVD在sI 4H-siC上生长的调制掺杂alxGa1-xN / GaN结构中二维电子气的光致发光研究