/ FABRICATION METHOD FOR HIGH QUALITY INGAN/GAN MULTI-QUANTUM WELLS

摘要

The present invention, in the manufacturing method of the indium gallium nitride-based well layers and gallium nitride barrier layer is a multiple quantum well which is formed by alternating structure layer, forming a gallium nitride-based barrier relates to a process for the preparation of a multiple quantum well structure layer the indium gallium nitride-based according to the surface of the well layer in the method of the invention characterized in that the treatment with a gas selected from the group consisting of hydrogen, methane and chlorine, has a high quality interface between the light-emitting characteristics significantly improved multiple quantum advance possible to produce a well structure, and can be effectively applied to a light emitting diode.