Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

摘要

The design of InGaN-delta-InN quantum wells (QWs) leads to significant redshift for nitride active region with large electron-hole wave function overlap (Γ_(e_hh)) and spontaneous emission rate. The analysis was carried out by using self-consistent six-band k·p band formalism. The design of active region consisting of 30 A In_(0.25)Ga_(0.75)N QW with InN delta-layer leads to large Γ_(e_hh) of >50% with emission wavelength in the yellow and red spectral regimes, which is applicable for nitride-based light-emitting diodes.