机译:高光谱效率InGaN / GaN多量子阱太阳能电池,光谱响应扩展至520 nm
Materials Department, University of California, Santa Barbara, California 93106, USA;
Department of Electrical and Computer Engineering, University of California, Santa Barbara,California 93106, USA;
Materials Department, University of California, Santa Barbara, California 93106, USA;
Materials Department, University of California, Santa Barbara, California 93106, USA;
Materials Department, University of California, Santa Barbara, California 93106, USA;
Department of Electrical and Computer Engineering, University of California, Santa Barbara,California 93106, USA;
Materials Department, University of California, Santa Barbara, California 93106, USA,Department of Electrical and Computer Engineering, University of California, Santa Barbara,California 93106, USA;
Materials Department, University of California, Santa Barbara, California 93106, USA,Department of Electrical and Computer Engineering, University of California, Santa Barbara,California 93106, USA;
Department of Electrical and Computer Engineering, University of California, Santa Barbara,California 93106, USA;
Materials Department, University of California, Santa Barbara, California 93106, USA;
机译:半极性Ingan / GaN多量子井太阳能电池,可光谱响应高达560nm
机译:量子阱数对InGaN / GaN多量子阱太阳能电池光谱响应的影响
机译:极化和p型GaN电阻率对InGaN / GaN多量子阱太阳能电池光谱响应的影响
机译:使用CdS量子点和分布式布拉格反射器提高InGaN / GaN多量子阱太阳能电池的效率
机译:以极性,半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
机译:InGaN / GaN多量子阱LED纳米线中的载流子局部化效应:发光量子效率的提高和负热活化能
机译:量子阱生长温度对在绿色和蓝色光谱区域发射的InGaN / GaN多量子阱的复合效率的影响