Temperature-dependent properties of semimetai graphite-ZnO Schottky diodes

摘要

Highly rectifying semimetai graphite/ZnO Schottky diodes with a low-ideality-factor (1.08 at 300 K) were investigated by temperature-dependent current-voltage measurements. The current transport was dominated by thermionic emission between 300 and 420 K and the extracted barrier height followed the Schottky-Mott relation. A Richardson constant (A~(**) = 0.272 A cm~(-2)K~(-2)) extracted from the Richardson plot shows nearly linear characteristics in the temperature range 300-420 K.