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Method of making a Schottky diode with improved voltage properties
Method of making a Schottky diode with improved voltage properties
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机译:制备具有改善的电压特性的肖特基二极管的方法
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摘要
The voltage behaviour of a Schottky diode is improved by providing a Schottky diode of the type comprising an epitaxial layer locally covered with a metal layer and by depleting the space charge zone in the epitaxial layer at the periphery of the metal layer. This depletion is obtained by implanting ions counter balancing the initial doping of the epitaxial layer.
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