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Hydrogen detection with semi metal graphite-ZnO (InP.GaN) Schottky diodes

机译:半金属石墨锌(INP.GAN)施氢检测肖特基二极管

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We investigated Schottky diode hydrogen sensors prepared by printing colloidal graphite on ZnO, GaN, and InP substrates partly covered with Pt nanoparticles. A layer of Pt nanoparticles deposited by in-situ pulsed electrophoretic deposition from isooctane colloidal solutions was inserted between the semimetal graphite and the semiconductor surface to dissociate hydrogen molecules. Schottky diodes were investigated by the measurement of current-voltage characteristics and further tested for their sensitivity to hydrogen in a cell with a through-flow gas system. The sensing elements were sensitive to gas mixture with a low hydrogen concentration down to 1 ppm.
机译:我们调查了通过在ZnO,GaN和INP底物上印刷胶体石墨制备的肖特基二极管氢传感器,这些二极管在ZnO,GaN和INP底物上部分地覆盖有Pt纳米颗粒。通过原位脉冲电泳沉积的一层Pt纳米颗粒从异辛烷胶体溶液中沉积的沉积,在半晶石和半导体表面之间插入到解离氢分子之间。通过测量电流 - 电压特性来研究肖特基二极管,并进一步测试其在具有通流气体系统的电池中对氢的敏感性。传感元件对气体混合物敏感,低氢浓度降至1ppm。

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