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机译:GaAs成核层生长温度对Ge衬底上单晶生长的InAs / GaAs量子点的影响
Department of Electronic & Electrical Engineering, University College London, London WC1E 7JE, United Kingdom;
Department of Electronic & Electrical Engineering, University College London, London WC1E 7JE, United Kingdom;
Department of Electronic & Electrical Engineering, University College London, London WC1E 7JE, United Kingdom;
Department of Electronic & Electrical Engineering, University College London, London WC1E 7JE, United Kingdom;
Department of Electronic & Electrical Engineering, University College London, London WC1E 7JE, United Kingdom;
Centre for Nanoscience and Technology, University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom;
Centre for Nanoscience and Technology, University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom;
Centre for Nanoscience and Technology, University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom;
机译:在Si衬底上整体生长的1.3μmInAs / GaAs量子点激光器中位错滤光层的优化
机译:温度对在应变GaAs层上生长的InAs / GaAs量子点生长的影响
机译:在GaAs(001)衬底上生长的多层InAs / GaAs量子点中光学特性对温度的依赖性
机译:使用InAlAs / GaAs位错滤光层在Si衬底上整体生长1.3μmInAs / GaAs量子点激光器
机译:用于太阳能电池的高质量InAs / GaAsSb量子点的外延生长。
机译:硅衬底上直接生长的InAs / InGaAs / GaAs量子点太阳能电池
机译:用于在si衬底上单片生长的1.3μmInas/ Gaas量子点激光器的缺陷滤光层的优化