机译:在Si衬底上整体生长的1.3μmInAs / GaAs量子点激光器中位错滤光层的优化
Dept. of Electron. & Electr. Eng., Univ. Coll. London, London, UK;
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; integrated optoelectronics; micro-optics; optical fabrication; optical filters; optimisation; quantum dot lasers; semiconductor growth; semiconductor superlattices; silicon; III-V QD material integration; InAlAs-GaAs; InAs-GaAs; dislocation filter layer optimisation; indium aluminium arsenide-gallium arsenide strained layer superlattices; indium arsenide-gallium arsenide quantum-dot laser monolithically growth; silicon substrates; size 1.3 mum; temperature 293 K to 298 K; threshold current density;
机译:在Si,Ge和Ge-on-Si衬底上整体生长InAs / GaAs量子点激光器
机译:1.3μmInAs / GaAs量子点激光器单片生长在工作于100°以上的Si衬底上
机译:在Ge衬底上单片生长的长波长InAs / GaAs量子点激光二极管
机译:使用InAlAs / GaAs位错滤光层在Si衬底上整体生长1.3μmInAs / GaAs量子点激光器
机译:减少在GaAs底物上生长在GaAs底物上的喘气脱位,用于光伏和蒸煮器应用
机译:1.3μmInAs / GaAs自组装量子点激光器的热效应和小信号调制
机译:用于在si衬底上单片生长的1.3μmInas/ Gaas量子点激光器的缺陷滤光层的优化
机译:通过横向外延过度生长在Ge涂层si衬底上生长的低位错密度Gaas外延层。