Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors

摘要

p-type tin monoxide (SnO) nanowire field-effect transistors with stable enhancement mode behavior and record performance are demonstrated at 160 ℃. The nanowire transistors exhibit the highest field-effect hole mobility (10.83 cm~2 V~(-1) s~(-1)) of any p-type oxide semiconductor processed at similar temperature. Compared to thin film transistors, the SnO nanowire transistors exhibit five times higher mobility and one order of magnitude lower subthreshold swing. The SnO nanowire transistors show three times lower threshold voltages (-1 V) than the best reported SnO thin film transistors and fifteen times smaller than p-type Cu_2O nanowire transistors. Gate dielectric and process temperature are critical to achieving such performance.