N-type oxide semiconductor nanowire gas sensors coated with discrete nano-islands of p-type oxide semiconductors and fabrication method thereof

摘要

can be designed for gas selectivity , among the reducing gas to enhance the selectivity for a specific gas in a large width the service number that the gas sensor and a method of manufacturing the same. The gas sensor according to the present invention comprises a p-type oxide semiconductor nano discontinuous islands (nano islands) gas -sensitive materials on the formation of the n-type oxide semiconductor nanowire or nanowires network . According to the present invention , n-type oxide semiconductor nano- pn junction at the interface between the line and the p-type oxide semiconductor nano- island is formed can adjust the relative sensitivity of the nanowire gas and oxidizing gas and a reducing gas resistance . And , among the reducing gas by the catalytic effect of the resulting p-type oxide semiconductor can be improved significantly for a given gas selectivity . ;