机译:单片生长的多色InAs量子点作为光谱形状可控的近红外宽带光源
Faculty of Systems Engineering, Wakayama University, Wakayama 640-8510, Japan;
Faculty of Systems Engineering, Wakayama University, Wakayama 640-8510, Japan;
NEC Corporation, Tsukuba, Ibaraki 305-8501 Japan;
National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0047, Japan;
National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0047, Japan;
Faculty of Photonics Science, Chitose Institute of Science and Technology, Chitose, Hokkaido 066-8655, Japan;
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan;
Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S3 7HQ, United Kingdom;
机译:基于四色自组装InAs量子点的宽带光源在选择区域整体生长
机译:在形状控制宽带光源的选择区域中生长的多色量子点集合
机译:INAS / GAAS量子点的发射波长控制使用AS_2近红外宽带光源应用
机译:O频段Inas量子点光源在单片上种植
机译:INAS量子点激光在硅基板上的单片集成
机译:自组装InGaN量子点的宽带全色单片InGaN发光二极管
机译:在si衬底上单片生长的长波长Inas / Gaas量子点发光源