Emission wavelength control of InAs/GaAs quantum dots using an As_2 source for near-infrared broadband light source applications

摘要

Herein, we report an emission wavelength control technique for self-assembled InAs quantum dots (QDs) grown via molecular beam epitaxy using an As-2 source (As-2-QDs). The As-2-QDs exhibited photoluminescence with a shorter center wavelength and larger bandwidth than those of the QDs grown using an As-4 source. In addition, the emission center wavelength could be controlled by adjusting the time between the growth and capping of the As-2-QDs. We utilized the multilayer stack of emission-wavelength-controlled As-2-QDs to fabricate an electrically-driven light source and demonstrated its broadband (approximately 130 nm) emission in the 1-1.3 mu m wavelength range.