Broadband Light Source Based on Four-Color Self-Assembled InAs Quantum Dot Ensembles Monolithically Grown in Selective Areas

摘要

We developed advanced techniques for the growth of self assembled quantum dots (QDs) for fabricating a broadband light source that can be applied to optical coherence tomography (OCT). Four QD en sembles and strain reducing layers (SRLs) were grown in selective areas on a wafer by the use of a 90° rotational metal mask. The SRL thickness was varied to achieve appropriate shifts in the peak wavelength of the QD emission spectrum of up to 120nm. The four-color QD ensembles were expected to have a broad bandwidth of more than 160 nm due to the com bination of excited state emissions when introduced in a current-induced broadband light source such as a superluminescent diode (SLD). Further more, a desired shape of the SLD spectrum can be obtained by controlling the injection current applied to each QD ensemble. The broadband and spectrum shape controlled light source is promising for high-resolution and low-noise OCT systems.