机译:Sr和Mn共掺杂LaCuSO:宽带隙氧化物稀释的磁性半导体,T_c约为200 K
Department of Physics and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China;
Department of Physics and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China,Department of Physics, Hangzhou Normal University, Hangzhou 310036, China;
Department of Physics and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China;
Department of Physics and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China;
Department of Physics and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China;
Department of Physics and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China;
Department of Physics and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China;
Department of Physics and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China;
Department of Physics and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China;
机译:宽带隙稀释的磁性半导体和氧化物中的空穴态
机译:宽带隙稀磁半导体(Ga,Mn)N中的超顺磁性阻挡现象和室温铁磁性
机译:宽带隙稀磁半导体GaMnN的磁光光谱
机译:与非磁性杂质共掺杂的宽禁带隙磁半导体中的异常霍尔效应
机译:宽带隙稀磁半导体对自旋电子学的适用性研究。
机译:过渡金属氧化物和稀磁半导体中的新型光致相变
机译:sr和mn共掺杂LaCusO:宽带隙氧化物稀磁 TC约为200K的半导体