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首页> 外文期刊>Materials Science and Engineering. B, Solid-State Materials for Advanced Technology >Magneto-optical spectroscopy of the wide band gap diluted magnetic semiconductor GaMnN
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Magneto-optical spectroscopy of the wide band gap diluted magnetic semiconductor GaMnN

机译:宽带隙稀磁半导体GaMnN的磁光光谱

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摘要

Magneto-optical studies of an internal transition of Mn in the diluted magnetic semiconductor (Ga,Mn)N are reported. A strong zero-phonon line (ZPL) is observed at 1.413 eV, followed by weak phonon replicas. The sharpness of the ZPL in very diluted samples allows a precise study of its Zeeman effect in magnetic fields up to 11 T in both Faraday and Voigt configurations. Some consequences concerning the analysis of the Mn~(3+) (3d~4) configuration, the magnetic properties of the Mn system, and the spin-carrier coupling as revealed from magnetic circular dichroism at the bandgap, are briefly discussed.
机译:磁光研究了稀磁半导体(Ga,Mn)N中Mn的内部跃迁。在1.413 eV处观察到强零声子线(ZPL),然后是弱声子副本。 ZPL在非常稀释的样品中的锋利度使得可以在法拉第和Voigt配置下,精确研究Zeman效应在高达11 T的磁场中的作用。简要讨论了有关Mn〜(3+)(3d〜4)构型分析,Mn系统的磁性能以及带隙磁圆二色性揭示的自旋-载流子耦合的一些结果。

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