Electrical characterization of In_(0.53)Ga_(0.47)As/Ln_(0.52)Al_(0.48)As high electron mobility transistors on plastic flexible substrate under mechanical bending conditions

摘要

InAlAs/InGaAs high electron mobility transistors (HEMTs) have been transferred onto polyimide flexible substrate. By means of epitaxial layer optimization, kink effect in HEMT on flexible substrate, which existed in our previous work, has been suppressed. The value of maximum drain current reaches 580 mA/mm and high cut-off frequencies f_T = 160 GHz, f_(max) = 290 GHz are obtained for unbent status. The effect of mechanical bending conditions on electrical performance has been also investigated in static and dynamic regimes. This study indicates that electrical characteristics are weakly affected by bending induced strain. These bending mechanical tests demonstrate the viable flexibility of the devices.