High Performance 50nm T-Gate In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As Metamorphic High Electron Mobility Transistors

摘要

We report the performance of 50 nm gate length metamorphic GaAs HEMTs with maximum transconductancc(g_m) of 1520 mS/mm and current cut-off frequency(f_T) of 350 GHz, to our knowledge the highest g_m and f_T of a GaAs-based HEMT transistor. The devices were fabricated with a novel UVIII/PMMA T-gate resist stack and a non-selective "digital" wet etch gate recess technology which results in a highly uniform, high yield sub-100 nm HEMT technology.