Improvement of AIGaN/GaN/Si high electron mobility heterostructure performance by hydrogenation

摘要

The charge transport properties of high electron mobility AIGaN/GaN/Si heterostructure are improved by its deuteration under properly designed experimental conditions; an increase of 30% on the two dimensional electron gas electrical conductivity, produced by an equivalent increase on its electron concentration, with unchanged mobility is observed. These parameters dependence with the probe current is reduced as well. The increase on the free electron concentration is explained by the release of captured electrons by the deuterium passivation of ionized acceptors. The improvements might impact not only the structure ability to handle current but other parameters as breakdown voltage and electrical noise.