Atomic layer deposition of Al-incorporated Zn(O,S) thin films with tunable electrical properties

摘要

Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition were incorporated with aluminum to adjust the carrier concentration. The electron carrier concentration increased up to one order of magnitude from 10~(19) to 10~(20) cm~(-3) with aluminum incorporation and sulfur content in the range of 0 ≤ S/(Zn+Al) ≤ 0.16. However, the carrier concentration decreased by five orders of magnitude from 10~(19) to 10~(14) cm~(-3) for S/(Zn+Al) = 0.34 and decreased even further when S/(Zn+Al) ＞ 0.34. Such tunable electrical properties are potentially useful for graded buffer layers in thin-film photovoltaic applications.