Zn doped SnS2 thin films were prepared by thermal evaporation.Effects of Zn contents and heat-treatment condition on thin film phase structure,surface morphology and photoelectric performance were investigated.Results show that after heat-treatment at 380℃ for 15 min the films with weight ratio of Sn to S =1:1.08 take on simple orthorhombic structure.The heat-treatment condition of 9 wt％ Zn doped SnS2 thin films was at 370℃ for 20 min.The state of Sn,S and Zn were Sn4+,S2-and Zn2+.After Zn doping,the direct optical band gap of SnS2 thin films reduced from 2.12eV to 2.07eV,and the resistivity two orders of magnitude decreased from 4.97 × 102Ω·cm to 2.0Ω· cm.The conduting type of all SnS2 thin films was n-type.%热蒸发制备Zn掺杂SnS2薄膜,研究不同Zn含量及热处理条件对薄膜的物相结构、表面形貌和光电性能的影响.实验给出用Sn:S=1∶1.08(wt)混合粉末沉积的薄膜,经380℃、15min热处理后得到简单正交晶系的SnS2薄膜;9(wt％)掺Zn后的薄膜热处理条件为370℃、20min.Sn、S和Zn分别以正4价、负2价和正2价存在于薄膜中.SnS2薄膜的直接光学带隙为2.12eV,掺Zn后为2.07eV;薄膜的电阻率从未掺Zn时的4.97×102Ω·cm降低到2.0Ω· cm,下降了两个数量级,所有SnS2薄膜导电类型均为N型.
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