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Ultra-violet light enhanced super critical fluid treatment in In-Ga-Zn-O thin film transistor

机译：In-Ga-Zn-O薄膜晶体管中的紫外线增强超临界流体处理

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摘要

A low-temperature ultra-violet (UV) light enhanced supercritical CO_2 (SCCO_2) fluid treatment is employed to improve the performance of In-Ga-Zn-0 (IGZO) thin film transistor (TFT) device. In this study, amorphous IGZO film deposited by sputtering is investigated in SCCO_2 ambient under different illumination conditions. After SCCO_2 treatment with UV exposure, the mobility and subthreshold swing of the TFT can be significantly improved. A model is proposed to explain the mechanism, and the improvement is due to the reduction of dangling bonds at the grain boundary. With the help of UV, dangling bonds can be effectively passivated by OH chemical groups.
机译：低温紫外线（UV）增强超临界CO_2（SCCO_2）流体处理被用来提高In-Ga-Zn-0（IGZO）薄膜晶体管（TFT）器件的性能。在这项研究中，研究了在不同照明条件下在SCCO_2环境下通过溅射沉积的非晶IGZO膜。用紫外线进行SCCO_2处理后，可以显着改善TFT的迁移率和亚阈值摆幅。提出了一个模型来解释这种机理，并且这种改进是由于晶界上悬空键的减少所致。借助紫外线，悬挂键可被OH化学基团有效钝化。

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  • 来源
    《Applied Physics Letters》 |2014年第24期|243508.1-243508.4|共4页
  • 作者

    Hsin-Iu Chen; Ting-Chang Chang; Tai-Fa Young; Tsung-Ming Tsai; Kuan-Chang Chang; Rui Zhang; Sheng-Yao Huang; Kai-Huang Chen; J. C. Lou; Min-Chen Chen; Chih-Cheng Shih; Syuan-Yong Huang; Jung-Hui Chen;

  • 作者单位

    Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

    Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan,Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan 700, Taiwan;

    Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

    Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

    Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

    School of Software and Microelectronics, Peking University, Beijing 100871, People's Republic of China;

    Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

    Department of Electronics Engineering and Computer Science, Tung-Fang Design University, Kaohsiung 829, Taiwan;

    School of Software and Microelectronics, Peking University, Beijing 100871, People's Republic of China;

    Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

    Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

    Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

    Department of Chemistry, National Kaohsiung Normal University, 802 Kaohsiung, Taiwan;

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