机译:InGaN / GaN发光二极管与AlGaN / GaN高电子迁移率晶体管的无金属互连集成
Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong;
Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong;
Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong;
Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong;
Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong;
机译:InGaN / GaN发光二极管与AlGaN / GaN高电子迁移率晶体管单片集成的通用缓冲平台的优化
机译:带有AlGaN-GaN-AlGaN电子阻挡层的蓝色InGaN / GaN发光二极管的效率增强
机译:蓝宝石衬底上GaN中的发光功率集成电路的发光二极管和功率金属氧化物半导体沟道高电子迁移率晶体管的单片集成
机译:具有AlGaN / GaN电子阻挡层的多层结构的InGaN / GaN发光二极管的增强输出功率
机译:热,应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
机译:等离子体电子通量对InGaN / GaN发光二极管p-GaN上超薄锡掺杂氧化铟接触层的无损溅射溅射的影响
机译:具有AlGaN / GaN / AlGaN量子阱结构的电子阻挡层的蓝色InGaN / GaN发光二极管的优势
机译:Nichia alGaN / InGaN / GaN蓝色发光二极管的寿命试验