Improved GaSb-based quantum well laser performance through metamorphic growth on GaAs substrates

摘要

The promise of the metamorphic growth paradigm is to enable design freedom of the substrate selection criteria beyond current choices that are limited by lattice matching requirements. A demonstration of this emerging degree of freedom is reported here by directly comparing identical laser structures grown both pseudomorphically on a GaSb substrate and metamorphically on a GaAs substrate. Improved thermal performance of the metamorphic laser material enables a higher output power before thermal roll-over begins. These performance gains are demonstrated in minimally processed gain-guided broad-area type-Ⅰ lasers emitting close to 2-μm wavelengths and mounted p-side up. Continuous wave measurements at room temperature yield a T_0 of 145 K and peak output power of 192 mW from metamorphic lasers, compared to a T_0 of 96 K and peak output power of 164 mW from identical lasers grown pseudomorphically on GaSb.