机译:暴露于下游氢等离子体的Si / SiO_2 /石墨烯三层系统的光谱椭圆偏振法:氢化和化学溅射的影响
Department of Physics, University of Basel, Klingelbergstrasse 82, CH-40S6 Basel, Switzerland,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;
Department of Physics, University of Basel, Klingelbergstrasse 82, CH-40S6 Basel, Switzerland;
Department of Physics, University of Basel, Klingelbergstrasse 82, CH-40S6 Basel, Switzerland;
Department of Physics, University of Basel, Klingelbergstrasse 82, CH-40S6 Basel, Switzerland;
Department of Physics, University of Basel, Klingelbergstrasse 82, CH-40S6 Basel, Switzerland;
Department of Physics, University of Basel, Klingelbergstrasse 82, CH-40S6 Basel, Switzerland;
机译:使用直流鞍场等离子体增强化学气相沉积系统沉积氢化非晶硅薄膜的椭圆偏振光谱研究
机译:等离子体增强化学气相沉积法沉积氢化非晶硅碳合金薄膜的椭圆偏振光谱研究
机译:用储氢系统的防腐和电化学性能增强效果,将石墨烯氧化物涂层减少
机译:在氢等离子体下氧化物蚀刻和表面损伤过程的原位光谱椭圆形研究
机译:缺陷介导的外延石墨烯的电化学加氢:向基于石墨烯的微生物燃料电池迈进。
机译:原子氮/氢的作用在GaN薄膜生长中通过用双重等离子体来源化学辅助溅射
机译:si / siO2 /石墨烯三层体系暴露于下游氢等离子体的光谱椭偏法:加氢和化学溅射的影响