IN situ spectroscopic ellipsometry study of the oxide etching and surface damaging processes on silicon under hydrogen plasma

摘要

We employed in situ ellipsometry in the monitoring of surface damage to monocrystalline silicon (Si) substrates under hydrogen plasma conditions. These measurements were complemented with spectroscopic ellipsometry and Raman spectroscopy, in order to characterize the surface conditions. It was found that heating the Si substrate to 700°C in the presence of molecular hydrogen produces etching of the native oxide layer, which is typically 10 A thick. When the already hot and bare silicon surface issubmitted to hydrogen plasma, it deteriorates very fast, becoming rough and full of voids. Modeling of the spectroscopic ellipsometry data was used to obtain a quantitative physical picture of the surface damage, in terms of roughness layer thickness andvoid fraction. The results indicate that by the time a thin film starts to grow on these silicon surfaces, like in the chemical vapor deposition of diamond, the roughness produced by the hydrogen plasma has already determined to a large extent the roughnature of the film to be grown.