At the time of epitaxial wafer production at the time of hydrogen etching in graduation of the silicon carbide substrate in order to remove the grinding damage of the surface production manner

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon carbide smoothed substrate to be used in manufacturing an epitaxial wafer participating in the crystal growth of silicon carbide, and to provide the silicon carbide smoothed substrate, a silicon carbide epitaxial wafer, a gallium nitride wafer and a semiconductor manufacturing device.;SOLUTION: In the manufacturing method of the silicon carbide smoothed substrate of this invention, a raw material gas (silane) is added during hydrogen etching in smoothing of a silicon carbide substrate.;COPYRIGHT: (C)2006,JPO&NCIPI