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Spectroscopic ellipsometry on Si/SiO2/graphene tri-layer system exposed to downstream hydrogen plasma: Effects of hydrogenation and chemical sputtering

机译:si / siO2 /石墨烯三层体系暴露于下游氢等离子体的光谱椭偏法:加氢和化学溅射的影响

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摘要

In this work, the optical response of graphene to hydrogen plasma treatment is investigated with spectroscopic ellipsometry measurements. Although the electronic transport properties and Raman spectrum of graphene change after plasma hydrogenation, ellipsometric parameters of the Si/SiO2/graphene tri-layer system do not change. This is attributed to plasma hydrogenated graphene still being electrically conductive, since the light absorption of conducting 2D materials does not depend on the electronic band structure. A change in the light transmission can only be observed when higher energy hydrogen ions (30 eV) are employed, which chemically sputter the graphene layer. An optical contrast is still apparent after sputtering due to the remaining traces of graphene and hydrocarbons on the surface. In brief, plasma treatment does not change the light transmission of graphene; and when it does, this is actually due to plasma damage rather than plasma hydrogenation. (C) 2015 AIP Publishing LLC.
机译:在这项工作中,用椭圆偏振光谱法研究了石墨烯对氢等离子体处理的光学响应。尽管等离子体氢化后石墨烯的电子输运性质和拉曼光谱发生了变化,但Si / SiO2 /石墨烯三层系统的椭偏参数并未发生变化。这归因于等离子体氢化的石墨烯仍然是导电的,因为导电的2D材料的光吸收不取决于电子能带结构。仅当采用化学溅射石墨烯层的高能氢离子(30 eV)时,才能观察到透光率的变化。由于表面上残留的石墨烯和碳氢化合物,溅射后的光学对比度仍然很明显。简而言之,等离子处理不会改变石墨烯的透光率。当发生这种情况时,这实际上是由于等离子体损坏而不是等离子体氢化引起的。 (C)2015 AIP Publishing LLC。

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