Low-noise epitaxial graphene on SiC Hall effect element for commercial applications

摘要

In this report, we demonstrate a complete Hall effect element that is based on quasi-free-standing monolayer graphene synthesized on a semi-insulating on-axis Si-terminated 6H-SiC substrate in an epitaxial Chemical Vapor Deposition process. The device offers the current-mode sensitivity of 87 V/AT and low excess noise (Hooge's parameter α_H＜2 × 10~(-3)) enabling room-temperature magnetic resolution of 650 nT/Hz~(0.5) at 10 Hz, 95 nT/Hz~(0.5) at 1 kHz, and 14 nT/Hz~(0.5) at 100 kHz at the total active area of 0.1275 mm~2. The element is passivated with a silicone encapsulant to ensure its electrical stability and environmental resistance. Its processing cycle is suitable for large-scale commercial production and it is available in large quantities through a single growth run on an up to 4-in SiC wafer.