机译:氮阴离子掺杂作为抑制ZnSnO薄膜晶体管的负栅极偏置照明不稳定性的策略
School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800, People's Republic of China,Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, People's Republic of China;
School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800, People's Republic of China;
School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800, People's Republic of China;
Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, People's Republic of China;
School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800, People's Republic of China;
School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800, People's Republic of China,Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, People's Republic of China;
机译:Target掺杂双靶磁控共溅射系统抑制ZnSnO薄膜晶体管的负偏置照明不稳定性
机译:使用分布式布拉格反射器在负偏置照明应力下抑制a-IGZO薄膜晶体管的不稳定性
机译:具有边缘场结构的In-Ga-Zn-O薄膜晶体管中抑制的负偏压照明诱导的不稳定性
机译:负偏压和照明应力下漏极偏压对非晶InGaZnO薄膜晶体管不稳定性的影响
机译:铟镓锌氧化物和锌锡氧化物薄膜晶体管的制造工艺评估和负偏压照明应力研究。
机译:A-Ingazno薄膜晶体管中光漏电流和负偏压照明应力的退火诱导稳定性的定量分析
机译:通过电流 - 电压和电容 - 电压分析研究了ZnO薄膜晶体管的负栅极偏置不稳定性