机译:GaN单层MoS_2外延2D / 3D垂直异质结的结构和电学分析
Sensors and Electron Devices Direc., U.S. Army Research Laboratory, Adelphi, MD, United States;
Sensors and Electron Devices Direc., U.S. Army Research Laboratory, Adelphi, MD, United States;
Sensors and Electron Devices Direc., U.S. Army Research Laboratory, Adelphi, MD, United States;
Sensors and Electron Devices Direc., U.S. Army Research Laboratory, Adelphi, MD, United States;
Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, United States;
Department of Materials Science and Engineering, Center for Two-Dimensional and Layered Materials, Pennsylvania State University, University Park, PA, United States;
Sensors and Electron Devices Direc., U.S. Army Research Laboratory, Adelphi, MD, United States;
Weapons and Materials Research Direc., U.S. Army Research Laboratory, Aberdeen Proving Ground, MD, United States;
Weapons and Materials Research Direc., U.S. Army Research Laboratory, Aberdeen Proving Ground, MD, United States;
Weapons and Materials Research Direc., U.S. Army Research Laboratory, Aberdeen Proving Ground, MD, United States;
Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD, United States;
Department of Materials Science and Engineering, Center for Two-Dimensional and Layered Materials, Pennsylvania State University, University Park, PA, United States;
Sensors and Electron Devices Direc., U.S. Army Research Laboratory, Adelphi, MD, United States;
机译:MOS_2 / N-GaN 2D / 3D异质结中的温度依赖界面屏障行为
机译:通过构建分层3D CNFS / MOS_2 / Znin_2S_4复合材料的2D-2D P-N异质功能来增强界面电荷运输,使高效光催化氢气进化
机译:AU / MOS2 / N-GA-GAAs金属/ 2D / 3D混合异质结的结构,化学和电气参数
机译:单层MOS_2 / SI异质结的电接触性能研究
机译:与盐溶解和伸展构造有关的受盐影响的正断层:北海盐谷盐墙,犹他州和丹麦中部格拉本,北海的3D地震分析和2D数值模拟:与盐溶解和伸展构造有关的受盐影响的正断层:犹他州盐谷盐墙和北海丹麦中部Graben的3D地震分析和2D数值建模
机译:基于纳米多孔GaN和CoPc p–n垂直异质结的高性能自供电紫外光电探测器
机译:高效HTM-Free Perovskite太阳能电池垂直的2D / 3D异质结
机译:si上外延alN取向变化的微观结构分析,可能的来源及对随后GaN生长的影响